Nexperia, a leading semiconductor manufacturer, has announced a $200 million investment to enhance its production capabilities at its Hamburg facility. The funds will be used to develop next-generation wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), and to expand the production of silicon (Si) diodes and transistors.
This announcement was made in conjunction with Hamburg’s Minister for Economic Affairs, Dr. Melanie Leonhard, as part of the site’s 100-year anniversary celebration. The investment aims to meet the rising demand for efficient power semiconductors essential for various applications, including data centers, renewable energy, and electric vehicles.
From June 2024, Nexperia will begin producing SiC, GaN, and Si semiconductors in Germany, enhancing their position as a key player in the electrification and digitalization sectors. These technologies are crucial for improving energy efficiency and reducing environmental impact, aligning with global decarbonization goals.
Achim Kempe, COO and managing director of Nexperia Germany, highlighted that the investment would solidify Nexperia’s role as a supplier of energy-efficient semiconductors. He emphasized the Hamburg fab’s capability to handle a full range of WBG semiconductors while remaining a significant producer of small signal diodes and transistors.
The Hamburg factory has already initiated production lines for high-voltage GaN transistors and SiC diodes, with plans to establish 200 mm production lines for SiC MOSFETs and GaN HEMTs over the next two years. This expansion includes further automation of the existing infrastructure and increased silicon production capacity.
Nexperia’s initiative is expected to boost local economic development, create jobs, and enhance the European Union’s semiconductor self-sufficiency. The company collaborates closely with universities and research institutes, fostering innovation and technological advancement.
